Organoaminosilane precursors and methods for depositing films comprising same

ABSTRACT

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of Ser. No. 14/483,751, which was filedon Sep. 11, 2014, and is allowed under U.S. Pat. No. 10,453,675. U.S.Pat. No. 10,453,675 claims the priority benefit of U.S. ProvisionalApplication No. 61/880,261, filed Sep. 20, 2013 and the disclosure ofU.S. Pat. No. 10,453,675 and the provisional application 61/880,261 arehereby incorporated by reference in their entirety.

BACKGROUND OF THE INVENTION

Precursors, particularly organoaminosilane, and compositions thereofthat can be used for the deposition of silicon-containing films,including but not limited to, amorphous silicon, crystalline silicon,silicon nitride, silicon oxide, carbon doped silicon oxide, siliconcarbo-nitride, and silicon oxynitride films are described herein. In yetanother aspect, described herein is the use of the precursors fordepositing silicon-containing films in the fabrication of integratedcircuit devices. In these or other aspects, the organoaminosilaneprecursors may be used for a variety of deposition processes, includingbut not limited to, atomic layer deposition (“ALD”), chemical vapordeposition (“CVD”), plasma enhanced chemical vapor deposition (“PECVD”),low pressure chemical vapor deposition (“LPCVD”), and atmosphericpressure chemical vapor deposition.

Several classes of compounds can be used as precursors forsilicon-containing films such as, but not limited to, silicon oxide,carbon doped silicon oxide or silicon nitride films. Examples of thesecompounds suitable for use as precursors include silanes, chlorosilanes,polysilazanes, aminosilanes, and azidosilanes. Inert carrier gas ordiluents such as, but not limited, helium, hydrogen, nitrogen, etc., arealso used to deliver the precursors to the reaction chamber.

Low pressure chemical vapor deposition (LPCVD) processes are one of themore widely accepted methods used by semiconductor industry for thedeposition of silicon-containing films. Low pressure chemical vapordeposition (LPCVD) using ammonia may require deposition temperatures ofgreater than 750° C. to obtain reasonable growth rates and uniformities.Higher deposition temperatures are typically employed to provideimproved film properties. One of the more common industry methods togrow silicon nitride or other silicon-containing films is through lowpressure chemical vapor deposition in a hot wall reactor attemperatures >750° C. using the precursors silane, dichlorosilane,and/or ammonia. However, there are several drawbacks using this method.For example, certain precursors, such as silane are pyrophoric. This maypresent problems in handling and usage. Also, films deposited fromsilane and dichlorosilane may contain certain impurities. For example,films deposited using dichlorosilane may contain certain impurities,such as chlorine and ammonium chloride, which are formed as byproductsduring the deposition process. Films deposited using silane may containhydrogen.

Precursors that are used in depositing silicon nitride films such asBTBAS and chlorosilanes generally deposit the films at temperaturesgreater than 550° C. The trend of miniaturization of semiconductordevices and low thermal budget requires a lower process temperature anda higher deposition rate. The temperature, at which the silicon filmsare deposited, should decrease in order to prevent ion diffusion in thelattice, particularly for those substrates comprising metallizationlayers and on many Group III-V and II-VI devices. Accordingly, there isa need in the art to provide precursors for the deposition ofsilicon-containing films, such as silicon oxide, carbon doped siliconoxide, silicon oxynitride, or silicon nitride films that aresufficiently chemically reactive to allow deposition via CVD, ALD orother processes at temperatures of 550° C. or below or even at roomtemperature.

US Publ. No. 2013/224964 describes a method of forming a dielectric filmhaving Si—C bonds on a semiconductor substrate by atomic layerdeposition (ALD), includes: (i) adsorbing a precursor on a surface of asubstrate; (ii) reacting the adsorbed precursor and a reactant gas onthe surface; and (iii) repeating steps (i) and (ii) to form a dielectricfilm having at least Si—C bonds on the substrate. The precursor has aSi—C—Si bond in its molecule, and the reactant gas is oxygen-free andhalogen-free and is constituted by at least a rare gas.

JP Pat. No. JP2002158223 describes insulator films that are formed usingSi-type materials with the formula:{R³(R⁴)N}₃Si—{C(R¹)R²}_(n)—Si{N(R⁵)R⁶}₃, where R¹, R²═H, hydrocarbongroups, or X (halogen atom)-substituted hydrocarbon groups (R¹ and R²can be same), n=1-5 integer, R³, R⁴, R⁴ and R⁶═H, hydrocarbon groups orX (halogen atom)-substituted hydrocarbon groups (R³, R⁴, R⁵ and R⁶ canbe same). The insulator films may be formed on substrates by CVD.

U.S. Pat. No. 7,125,582 describes a method and system that involvescombining a Si source precursor and a nitrogen (N) source precursor at atemperature up to 550° C. and forming a Si nitride film.

The reference entitled “Synthesis of Volatile Cyclic Silylamines and theMolecular Structures of Two 1-Aza-2,5-disilacyclopentane Derivatives”,Mitzel, N. W. et al., Inorg. Chem., Vol 36(20) (1997), pp. 4360-4368describes a synthesis for making α,ω-bis(bromosilyl)alkanes,BrH₂Si(CH₂)_(n)SiH₂Br (with n=2 and 3). In the reference,1,2-Bis(bromosilyl)ethane reacts with ammonia to give1,4-bis(1-aza-2,5-disilacyclopentane-1-yl)-1,4-disilabutane, traces of1,6-diaza-2,5,7,10,11,14-hexasilabicyclo[4.4.4]tetradecane andnonvolatile products.

The reference entitled “Differences in reactivity of 1,4-disilabutaneand n-tetrasilane towards secondary amines”, Z. Naturforsch., B: Chem.Sci. FIELD Full Journal Title:Zeitschrift fuer Naturforschung, B:Chemical Sciences 45(12): 1679-83 described a synthesis for makingaminosilanes using 1,4-Disilabutane H₃SiCH₂CH₂SiH₃ (I) and n-tetrasilaneH₃SiSiH₂SiH₂SiH₃.

BRIEF SUMMARY OF THE INVENTION

Described herein are organoaminosilane precursors, compositionscomprising same, and methods using same for forming films comprisingsilicon, such as, but not limited to, amorphous silicon, crystallinesilicon, silicon oxide, carbon doped silicon oxide, silicon nitride,silicon oxynitride, silicon carbide, silicon carbonitride, andcombinations thereof onto at least a portion of a substrate. In oneparticular embodiment, the organoaminosilane precursors are effectivefor a low temperature (e.g., 350° C. or less), atomic layer deposition(ALD) or plasma enhanced atomic layer deposition (PEALD) of siliconoxide or carbon doped silicon oxide films. In addition, described hereinis a composition comprising an organoaminosilane described hereinwherein the organoaminosilane is substantially free of at least oneselected from the amines, halides (e.g., Cl, F, I, Br), higher molecularweight species, and trace metals. In these or other embodiments, thecomposition may further comprise a solvent. Also disclosed herein aremethods to form films comprising silicon or coatings on an object to beprocessed, such as, for example, a semiconductor wafer. In oneembodiment of the method described herein, a film comprising silicon andoxygen is deposited onto a substrate using an organoaminosilaneprecursor and an oxygen-containing source in a deposition chamber underconditions for generating a silicon oxide, carbon doped silicon oxidefilm on the substrate. In another embodiment of the method describedherein, a film comprising silicon and nitrogen is deposited onto asubstrate using an organoaminosilane precursor and a nitrogen containingprecursor in a deposition chamber under conditions for generating asilicon nitride film on the substrate. In a further embodiment, theorganoaminosilane precursors described herein can also be used a dopantfor metal containing films, such as but not limited to, metal oxidefilms or metal nitride films. In the compositions and methods describedherein, an organoaminosilane having the formula described herein isemployed as at least one of the silicon containing precursors.

In one aspect, the organoaminosilane precursor described hereincomprises a compound represented by one of following Formulae A throughE below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3 andoptionally wherein R³ in Formula D forms a ring selected from afour-membered, five-membered or six-membered ring with the two siliconatoms and at least one nitrogen atom; and p and q in Formula E equal 1or 2.

In another aspect, there is provided a composition comprising: (a) atleast one organoaminosilane precursor a compound represented by one offollowing Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom; and (b) a solvent. In certain embodiments of the compositiondescribed herein, exemplary solvents can include, without limitation,ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, tertiaryaminoether, and combinations thereof. In certain embodiments, thedifference between the boiling point of the organoaminosilane and theboiling point of the solvent is 40° C. or less.

In another aspect, there is provided a method for forming asilicon-containing film on at least one surface of a substratecomprising: providing the at least one surface of the substrate in areaction chamber; and forming the silicon-containing film on the atleast one surface by a deposition process chosen from a chemical vapordeposition process and an atomic layer deposition process using at leastone organoaminosilane precursor a compound represented by one offollowing Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom. In certain embodiments, R¹ and R² are the same. In otherembodiments, R¹ and R² are different. In the foregoing or otherembodiments, R¹ and R² can be linked together to form a ring. In furtherembodiments, R¹ and R² are not linked together to form a ring.

In another aspect, there is provided a method of forming a siliconoxide, carbon doped silicon oxide film via an atomic layer depositionprocess or ALD-like process, the method comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one organoaminosilane precursora compound represented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom;

c. purging the reactor with a purge gas;

d. introducing an oxygen-containing source into the reactor; and

e. purging the reactor with a purge gas; wherein steps b through e arerepeated until a desired thickness of the film is obtained.

In a further aspect, there is provided a method of forming a filmselected from a silicon oxide film and a carbon doped silicon oxide filmonto at least a surface of a substrate using a CVD process comprising:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one organoaminosilane precursora compound represented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom; and

c. providing an oxygen-containing source to deposit the film onto the atleast one surface. In certain embodiments of the method, R¹ and R² arethe same. In other embodiments, R¹ and R² are different. In theforegoing or other embodiments, R¹ and R² can be linked together to forma ring. In the yet further embodiments, R¹ and R² are not linkedtogether to form a ring.

In another aspect, there is provided a method of forming a siliconnitride or silicon carbonitride film via an atomic layer depositionprocess, the method comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor an at least one organoaminosilaneprecursor a compound represented by one of following Formulae A throughE below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq equal 1 or 2 in Formula E and optionally wherein R³ in Formula D formsa ring selected from a four-membered, five-membered or six-membered ringwith the two silicon atoms and at least one nitrogen atom;

c. purging the reactor with a purge gas;

d. introducing a nitrogen-containing source into the reactor;

e. purging the reactor with a purge gas; and wherein steps b through eare repeated until a desired thickness of the silicon nitride film isobtained. In certain embodiments, R¹ and R² in Formulae A through E arethe same. In other embodiments, R¹ and R² are different. In theforegoing or other embodiments, R¹ and R² can be linked together to forma ring. In a further embodiment, R¹ and R² are not linked together toform a ring.

In a further aspect, there is provided a method of forming a siliconnitride or carbonitride film onto at least a surface of a substrateusing a CVD process comprising:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one organoaminosilane precursora compound represented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom;

c. providing a nitrogen-containing source wherein the at least oneorganoaminosilane precursors and the nitrogen-containing source react todeposit the film onto the at least one surface. In certain embodiments,R¹ and R² are the same. In other embodiments, R¹ and R² are different.In the foregoing or other embodiments, R¹ and R² can be linked togetherto form a ring. In the yet further embodiments, R¹ and R² are not linkedtogether to form a ring.

In a further embodiment of the method described herein, the process isdepositing an amorphous or a crystalline silicon film. In thisembodiment, the method comprises:

placing one or more substrates into a reactor which is heated to one ormore temperatures ranging from ambient temperature to about 700° C.;

introducing at least one organoaminosilane precursor a compoundrepresented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom; and

providing a reducing agent source into the reactor to at least partiallyreact with the at least one organoaminosilane precursor and deposit asilicon-containing film onto the one or more substrates. The reducingagent is selected from the group consisting of hydrogen, hydrogenplasma, and hydrogen chloride. In certain embodiments of the CVD method,the reactor is maintained at a pressure ranging from 10 mTorr to 760Torr during the introducing step. The above steps define one cycle forthe method described herein, and the cycle of steps can be repeateduntil the desired thickness of a film is obtained. In certainembodiments, R¹ and R² are the same. In other embodiments, R¹ and R² aredifferent. In the foregoing or other embodiments, R¹ and R² can belinked together to form a ring. In the yet further embodiments, R¹ andR² are not linked together to form a ring.

In another aspect, there is provided a method of depositing an amorphousor a crystalline silicon film via an atomic layer deposition or cyclicchemical vapor deposition process, the method comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one organoaminosilane precursora compound represented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom wherein step b is repeated until a desired thickness of the film isobtained. In certain embodiments, the thickness of the film can be 1 Åor greater, or 1 to 10,000 Å, or 1 to 1000 Å, or 1 to 100 Å.

In another aspect, a vessel for depositing a silicon-containing filmcomprising one or more organoaminosilane precursor having any one ofFormulae A, B, C, or D or E a combination thereof of one or moreprecursors represented by Formulae A, B, C, D or E is described herein.In one particular embodiment, the vessel comprises at least onepressurizable vessel (preferably of stainless steel) fitted with theproper valves and fittings to allow the delivery of one or moreprecursors to the reactor for a CVD or an ALD process.

In yet another aspect, there is provided a method for preparing anorganoaminosilane comprising a compound represented by one of followingFormulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;wherein n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or3; p and q equal 1 or 2 in Formula E and optionally wherein R³ inFormula D forms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom, the method comprising the steps of:

reacting an amine having a formula selected from R¹R²NH and R¹NH₂wherein R¹ in the amine is selected from a linear or branched C₁ to C₁₀alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linear orbranched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and aC₅ to C₁₀ aryl group; wherein R² in the amine is selected from hydrogen,a linear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ toC₁₀ alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₃ toC₁₀ cyclic alkyl group, and a C₅ to C₁₀ aryl group with a silicon sourcecomprising at least one compound selected from the:

wherein R³ and R⁴ in the silicon source are independently selected froma linear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃to C₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group,a C₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene groupin the presence of a catalyst under reaction conditions sufficient forat least a portion of the silicon source and at least a portion of theamine to react and provide the organoaminosilane.

BRIEF DESCRIPTION OF FIGURE

FIG. 1 shows the relative deposition rates of the organoaminosilanedescribed herein, 1-di-iso-propylamino-1,4-disilabutane, compared todeposition rates of other organoaminosilanes provided in referencearticles such as bis(diethylamino)silane (BDEAS),bis(tert-butylamino)silane (BTBAS), bis(ethylmethylamino)silane (BEMAS),tris(dimethylamino)silane(TRDMAS), and di-sec-butylaminosilane (DSBAS).

DETAILED DESCRIPTION OF THE INVENTION

The organoaminosilanes described herein are used as precursors to formstoichiometric and non-stoichiometric silicon containing films such as,but not limited to, amorphous silicon, silicon-rich carbonitride,crystalline silicon, silicon oxide, silicon oxycarbide, silicon nitride,silicon oxynitride, and silicon oxycarbonitride. These precursors canalso be used, for example, as dopants for metal containing films. Theorganoaminosilane precursors used in semi-conductor processes aretypically high purity volatile liquid precursor chemical that arevaporized and delivered to a deposition chamber or reactor as a gas todeposit a silicon containing film via CVD or ALD processes forsemiconductor devices. The selection of precursor materials fordeposition depends upon the desired resultant silicon-containingmaterial or film. For example, a precursor material may be chosen forits content of chemical elements, its stoichiometric ratios of thechemical elements, and/or the resultant silicon containing film orcoating that are formed under CVD. The precursor material may also bechosen for various other characteristics such as cost, relatively lowtoxicity, handling characteristics, ability to maintain liquid phase atroom temperature, volatility, molecular weight, and/or otherconsiderations. In certain embodiments, the precursors described hereincan be delivered to the reactor system by any number of means,preferably using a pressurizable stainless steel vessel fitted with theproper valves and fittings, to allow the delivery of liquid phaseprecursor to the deposition chamber or reactor.

The organoaminosilane precursors described herein exhibit a balance ofreactivity and stability that makes them ideally suitable as CVD or ALDprecursors in microelectronic device manufacturing processes. Withregard to reactivity, certain precursors may have boiling points thatare too high to be vaporized and delivered to the reactor to bedeposited as a film on a substrate. Precursors having higher relativeboiling points require that the delivery container and lines need to beheated at or above the boiling point of the precursor under a givenvacuum to prevent condensation or particles from forming in thecontainer, lines, or both. With regard to stability, other precursorsmay form silane (SiH₄) or disilane (Si₂H₆) as they degrade. Silane ispyrophoric at room temperature or it can spontaneously combust whichpresents safety and handling issues. Moreover, the formation of silaneor disilane and other by-products decreases the purity level of theprecursor and changes as small as 1-2% in chemical purity may beconsidered unacceptable for reliable semiconductor manufacture. Incertain embodiments, the organoaminosilane precursors having Formulae Athrough E described herein comprise 2% or less by weight, or 1% or lessby weight, or 0.5% or less by weight of by-product after being storedfor a time period of 6 months or greater, or one year or greater whichis indicative of being shelf stable. In addition to the foregoingadvantages, in certain embodiments, such as for depositing a siliconoxide or silicon nitride or silicon film using an ALD, ALD-like, PEALD,or CCVD deposition method, the organoaminosilane precursor describedherein may be able to deposit high density materials at relatively lowdeposition temperatures, e.g., 500° C. or less, or 400° C. or less, 300°C. or less, 200° C. or less, 100° C. or less, or 50° C. or less. In oneparticular embodiment, the organoaminosilane precursor can be used todeposit a silicon-containing film via ALD or PEALD at a temperature aslow as 50° C. or less or at ambient or room temperature (e.g., 25° C.).

In one embodiment, described herein is a composition for forming asilicon-containing film comprising: an organoaminosilane having any oneof Formulae A through E described herein and a solvent(s). Without beingbound by any theory, it is believed that composition described hereinmay provide one or more advantages compared to pure organoaminosilane.These advantages include: better usage of the organoaminosilane insemiconductor processes, better stability over long term storage,cleaner evaporation by flash vaporization, and/or overall more stabledirect liquid injection (DLI) chemical vapor deposition process. Theweight percentage of the organoaminosilane in the composition can rangefrom 1 to 99% with the balance being solvent(s) wherein the solvent(s)does not react with the organoaminosilane and has a boiling pointsimilar to the organoaminosilane. With regard to the latter, thedifference between the boiling points of the organoaminosilane andsolvent(s) in the composition is 40° C. or less, more preferably 20° C.or less, or 10° C. or less. Exemplary solvents include, but not limitedto, hexanes, octane, toluene, ethylcyclohexane, decane, dodecane,bis(2-dimethylaminoethyl) ether.

In one aspect, there is provided at least one organoaminosilaneprecursor a compound represented by one of following Formulae A throughE below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom.

In the formulae and throughout the description, the term “alkyl” denotesa linear, or branched functional group having from 1 to 10 or 1 to 6carbon atoms. Exemplary alkyl groups include, but are not limited to,methyl (Me), ethyl (Et), propyl (Pr^(n)), isopropyl (Pr^(i)), butyl(Bu^(n)), isobutyl (Bu^(i)), sec-butyl (Bu^(s)), tert-butyl (Bu^(t)),pentyl, iso-pentyl, tert-pentyl (Am^(t)), hexyl, iso-hexyl, andneo-hexyl. In certain embodiments, the alkyl group may have one or morefunctional groups such as, but not limited to, an alkoxy group, adialkylamino group or combinations thereof, attached thereto. In otherembodiments, the alkyl group does not have one or more functional groupsattached thereto. Exemplary organoaminosilanes having Formula A andhaving alkyl groups as R¹ and R² (if present) and an alkylene group suchas methylene —CH₂— or ethylene —CH₂CH₂— as R³ include, but are notlimited to:

In the formulae and throughout the description, the term “cyclic alkyl”denotes a cyclic functional group having from 3 to 10 or from 4 to 10carbon atoms or from 5 to 10 carbon atoms. Exemplary cyclic alkyl groupsinclude, but are not limited to, cyclobutyl, cyclopentyl, cyclohexyl,and cyclooctyl groups. Exemplary organoaminosilanes having Formula A andhaving cyclic alkyl groups as R¹ and R² (if present) and an alkylenegroup such as methylene —CH₂— or ethylene —CH₂CH₂— as R³ include, butare not limited to:

In the formulae and throughout the description, the term “aryl” denotesan aromatic cyclic functional group having from 5 to 12 carbon atoms orfrom 6 to 10 carbon atoms. Exemplary aryl groups include, but are notlimited to, phenyl (Ph), benzyl, chlorobenzyl, tolyl, and o-xylyl.Exemplary organoaminosilanes having Formula A and having aryl groups asR¹ and R² (if present) and an alkylene group methylene —CH₂— or ethylene—CH₂CH₂— as R³ include:

In certain embodiments, one or more of the alkyl group, alkenyl group,alkynyl group, and/or aryl group in Formulae A through E may besubstituted or have one or more atoms or group of atoms substituted inplace of, for example, a hydrogen atom. Exemplary substituents include,but are not limited to, oxygen, sulfur, halogen atoms (e.g., F, Cl, I,or Br), nitrogen, and phosphorous. In other embodiments, one or more ofthe alkyl group, alkenyl group, alkynyl group, and/or aryl group inFormulae A through E may be unsubstituted.

In the formulae and throughout the description, the cyclic alkyl issubstituted or is a hetero-cyclic alkyl group. The term “hetero-cyclicalkyl” denotes a cyclic functional group having from 3 to 10 or from 4to 10 carbon atoms or from 5 to 10 carbon atoms as well as at least oneoxygen atom or nitrogen atom or both. Exemplary organoaminosilaneshaving Formula A and having hetero-cyclic alkyl groups as R¹ and R² (ifpresent) and an alkylene group methylene —CH₂— as R³ include, but arenot limited to:

In the formulae and throughout the description, the aryl is substitutedor is a hetero-aryl group. The term “hetero aryl” denotes arylfunctional group having from 3 to 10 or from 4 to 10 carbon atoms orfrom 5 to 10 carbon atoms as well as at least one oxygen atom ornitrogen atom or both. In the formulae and throughout the description,the term “alkenyl group” denotes a group which has one or morecarbon-carbon double bonds and has from 3 to 10 or from 3 to 6 or from 3to 4 carbon atoms.

In the formulae and throughout the description, the term “alkynyl group”denotes a group which has one or more carbon-carbon triple bonds and hasfrom 3 to 10 or from 3 to 6 or from 3 to 4 carbon atoms.

In the formulae and throughout the description, the term “alkylene”denotes a hydrocarbon group having from 1 to 10 or from 4 to 10 carbonatoms or from 5 to 10 carbon atoms and are connected to two siliconatoms. Exemplary alkylene groups include, but are not limited to,methylene (—CH₂—), ethylene (—CH₂CH₂—), propylene (—CH₂CH₂CH₂—), andiso-propylene (—CH(Me)CH₂—).

In the formulae and throughout the description, the term “arylene”denotes an aromatic cyclic functional group having from 5 to 12 carbonatoms or from 6 to 10 carbon atoms, preferably the two Si atoms arebonded to 1,2-positions or 1,4-positions of the arylene groups.

In the formulae and throughout the description, the term“hetero-arylene” denotes an aromatic cyclic functional group having from5 to 12 carbon atoms or from 6 to 10 carbon atoms, preferably the two Siatoms are bonded to 1,2-positions of the hetero-arylene groups.

In certain embodiments, R³ can be linked in the Formula D to form a ringstructure. Exemplary organoaminosilanes include, but are not limited to:

In yet another embodiments, R³ and R⁴ are each methylene —CH₂— or,alternatively, each ethylene —CH₂CH₂— in Formula E. Exemplaryorganoaminosilanes include, but are not limited to:

The method used to form the silicon-containing films or coatings aredeposition processes. Examples of suitable deposition processes for themethod disclosed herein include, but are not limited to, cyclic CVD(CCVD), MOCVD (Metal Organic CVD), thermal chemical vapor deposition,plasma enhanced chemical vapor deposition (“PECVD”), high density PECVD,photon assisted CVD, plasma-photon assisted (“PPECVD”), cryogenicchemical vapor deposition, chemical assisted vapor deposition,hot-filament chemical vapor deposition, CVD of a liquid polymerprecursor, deposition from supercritical fluids, and low energy CVD(LECVD). In certain embodiments, the metal containing films aredeposited via atomic layer deposition (ALD), plasma enhanced ALD (PEALD)or plasma enhanced cyclic CVD (PECCVD) process. As used herein, the term“chemical vapor deposition processes” refers to any process wherein asubstrate is exposed to one or more volatile precursors, which reactand/or decompose on the substrate surface to produce the desireddeposition. As used herein, the term “atomic layer deposition process”refers to a self-limiting (e.g., the amount of film material depositedin each reaction cycle is constant), sequential surface chemistry thatdeposits films of materials onto substrates of varying compositions.Although the precursors, reagents and sources used herein may besometimes described as “gaseous”, it is understood that the precursorscan be either liquid or solid which are transported with or without aninert gas into the reactor via direct vaporization, bubbling orsublimation. In some case, the vaporized precursors can pass through aplasma generator. In one embodiment, the silicon-containing film isdeposited using an ALD process. In another embodiment, thesilicon-containing film is deposited using a CCVD process. In a furtherembodiment, the silicon-containing film is deposited using a thermal CVDprocess. The term “reactor” as used herein, includes without limitation,reaction chamber or deposition chamber.

In certain embodiments, the method disclosed herein avoids pre-reactionof the precursors by using ALD or CCVD methods that separate theprecursors prior to and/or during the introduction to the reactor. Inthis connection, deposition techniques such as ALD or CCVD processes areused to deposit the silicon-containing film. In one embodiment, the filmis deposited via an ALD process by exposing the substrate surfacealternatively to the one or more the silicon-containing precursor,oxygen-containing source, nitrogen-containing source, or other precursoror reagent. Film growth proceeds by self-limiting control of surfacereaction, the pulse length of each precursor or reagent, and thedeposition temperature. However, once the surface of the substrate issaturated, the film growth ceases.

In certain embodiments, the method described herein further comprisesone or more additional silicon-containing precursors other than theorganoaminosilane precursor having the above Formulae A through E.Examples of additional silicon-containing precursors include, but arenot limited to, monoaminosilane (e.g., di-iso-propylaminosilane,di-sec-butylaminosilane, phenylmethylaminosilane); organo-siliconcompounds such as trisilylamine (TSA); siloxanes (e.g., hexamethyldisiloxane (HMDSO) and dimethyl siloxane (DMSO)); organosilanes (e.g.,methylsilane, dimethylsilane, diethylsilane, vinyl trimethylsilane,trimethylsilane, tetramethylsilane, ethylsilane, disilylmethane,2,4-disilapentane, 1,4-disilabutane, 2,5-disilahexane,2,2-disilylpropane, 1,3,5-trisilacyclohexane and fluorinated derivativesof these compounds); phenyl-containing organo-silicon compounds (e.g.,dimethylphenylsilane and diphenylmethylsilane); oxygen-containingorgano-silicon compounds, e.g., dimethyldimethoxysilane;1,3,5,7-tetramethylcyclotetrasiloxane; 1,1,3,3-tetramethyldisiloxane;1,3,5,7-tetrasila-4-oxo-heptane; 2,4,6,8-tetrasila-3,7-dioxo-nonane;2,2-dimethyl-2,4,6,8-tetrasila-3,7-dioxo-nonane;octamethylcyclotetrasiloxane; [1,3,5,7,9]-pentamethylcyclopentasiloxane;1,3,5,7-tetrasila-2,6-dioxo-cyclooctane; hexamethylcyclotrisiloxane;1,3-dimethyldisiloxane; 1,3,5,7,9-pentamethylcyclopentasiloxane;hexamethoxydisiloxane, and fluorinated derivatives of these compounds.

Depending upon the deposition method, in certain embodiments, the one ormore silicon-containing precursors may be introduced into the reactor ata predetermined molar volume, or from about 0.1 to about 1000micromoles. In this or other embodiments, the silicon-containing and/ororganoaminosilane precursor may be introduced into the reactor for apredetermined time period. In certain embodiments, the time periodranges from about 0.001 to about 500 seconds.

In certain embodiments, the silicon-containing films deposited using themethods described herein are formed in the presence of oxygen using anoxygen-containing source, reagent or precursor comprising oxygen. Anoxygen-containing source may be introduced into the reactor in the formof at least one oxygen-containing source and/or may be presentincidentally in the other precursors used in the deposition process.Suitable oxygen-containing source gases may include, for example, water(H₂O) (e.g., deionized water, purifier water, and/or distilled water),oxygen (O₂), oxygen plasma, ozone (O₃), NO, N₂O, NO₂, carbon monoxide(CO), carbon dioxide (CO₂), carbon dioxide plasma, and combinationsthereof. In certain embodiments, the oxygen-containing source comprisesan oxygen-containing source gas that is introduced into the reactor at aflow rate ranging from about 1 to about 2000 standard cubic centimeters(sccm) or from about 1 to about 1000 sccm. The oxygen-containing sourcecan be introduced for a time that ranges from about 0.1 to about 100seconds. In one particular embodiment, the oxygen-containing sourcecomprises water having a temperature of 10° C. or greater. Inembodiments wherein the film is deposited by an ALD or a cyclic CVDprocess, the precursor pulse can have a pulse duration that is greaterthan 0.01 seconds, and the oxygen-containing source can have a pulseduration that is less than 0.01 seconds, while the water pulse durationcan have a pulse duration that is less than 0.01 seconds. In yet anotherembodiment, the purge duration between the pulses that can be as low as0 seconds or is continuously pulsed without a purge in-between. Theoxygen-containing source or reagent is provided in a molecular amountless than a 1:1 ratio to the silicon precursor, so that at least somecarbon is retained in the as deposited silicon-containing film.

In certain embodiments, the silicon-containing films comprise siliconand nitrogen. In these embodiments, the silicon-containing filmsdeposited using the methods described herein are formed in the presenceof nitrogen-containing source. A nitrogen-containing source may beintroduced into the reactor in the form of at least onenitrogen-containing source and/or may be present incidentally in theother precursors used in the deposition process. Suitablenitrogen-containing source gases may include, for example, ammonia,hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen,nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/argonplasma, nitrogen/helium plasma, nitrogen/hydrogen plasma, and mixturethereof. In certain embodiments, the nitrogen-containing sourcecomprises an ammonia plasma or hydrogen/nitrogen plasma ornitrogen/argon plasma or nitrogen/helium plasma source gas that isintroduced into the reactor at a flow rate ranging from about 1 to about2000 standard cubic centimeters (sccm) or from about 1 to about 1000sccm. The nitrogen-containing source can be introduced for a time thatranges from about 0.01 to about 100 seconds. In embodiments wherein thefilm is deposited by an ALD or a cyclic CVD process, the precursor pulsecan have a pulse duration that is greater than 0.01 seconds, and thenitrogen-containing source can have a pulse duration that is less than0.01 seconds, while the water pulse duration can have a pulse durationthat is less than 0.01 seconds. In yet another embodiment, the purgeduration between the pulses that can be as low as 0 seconds or iscontinuously pulsed without a purge in-between.

The deposition methods disclosed herein may involve one or more purgegases. The purge gas, which is used to purge away unconsumed reactantsand/or reaction byproducts, is an inert gas that does not react with theprecursors. Exemplary purge gases include, but are not limited to, argon(Ar), krypton (Kr), xenon (Xe), nitrogen (N₂), helium (He), neon,hydrogen (H₂), and mixtures thereof. In certain embodiments, a purge gassuch as Ar is supplied into the reactor at a flow rate ranging fromabout 10 to about 2000 sccm for about 0.1 to 1000 seconds, therebypurging the unreacted material and any byproduct that may remain in thereactor.

The respective step of supplying the precursors, oxygen-containingsource, the nitrogen-containing source, and/or other precursors, sourcegases, and/or reagents may be performed by changing the time forsupplying them to change the stoichiometric composition of the resultingsilicon-containing film.

Energy is applied to the at least one of the precursor,nitrogen-containing source, reducing agent, other precursors orcombination thereof to induce reaction and to form thesilicon-containing film or coating on the substrate. Such energy can beprovided by, but not limited to, thermal, plasma, pulsed plasma, heliconplasma, high density plasma, inductively coupled plasma, X-ray, e-beam,photon, remote plasma methods, and combinations thereof. In certainembodiments, a secondary RF frequency source can be used to modify theplasma characteristics at the substrate surface. In embodiments whereinthe deposition involves plasma, the plasma-generated process maycomprise a direct plasma-generated process in which plasma is directlygenerated in the reactor, or alternatively a remote plasma-generatedprocess in which plasma is generated outside of the reactor and suppliedinto the reactor.

The organoaminosilane precursors and/or other silicon-containingprecursors may be delivered to the reaction chamber such as a CVD or ALDreactor in a variety of ways. In one embodiment, a liquid deliverysystem may be utilized. In an alternative embodiment, a combined liquiddelivery and flash vaporization process unit may be employed, such as,for example, the turbo vaporizer manufactured by MSP Corporation ofShoreview, Minn., to enable low volatility materials to bevolumetrically delivered, which leads to reproducible transport anddeposition without thermal decomposition of the precursor. In liquiddelivery formulations, the precursors described herein may be deliveredin neat liquid form, or alternatively, may be employed in solventformulations or compositions comprising same. Thus, in certainembodiments the precursor formulations may include solvent component(s)of suitable character as may be desirable and advantageous in a givenend use application to form a film on a substrate.

For those embodiments wherein the precursor(s) having Formulae A throughE is used in a composition comprising a solvent and an organoaminosilaneprecursor having Formulae A through E described herein, the solvent ormixture thereof selected does not react with the organoaminosilane. Theamount of solvent by weight percentage in the composition ranges from0.5% by weight to 99.5% or from 10% by weight to 75%. In this or otherembodiments, the solvent has a boiling point (b.p.) similar to the b.p.of the organoaminosilane of Formulae A through E or the differencebetween the b.p. of the solvent and the b.p. of the organoaminosilane ofFormulae A through E is 40° C. or less, 30° C. or less, or 20° C. orless, or 10° C. Alternatively, the difference between the boiling pointsranges from any one or more of the following end-points: 0, 10, 20, 30,or 40° C. Examples of suitable ranges of b.p. difference include withoutlimitation, 0 to 40° C., 20° to 30° C., or 10⁰ to 30° C. Examples ofsuitable solvents in the compositions include, but are not limited to,an ether (such as 1,4-dioxane, dibutyl ether), a tertiary amine (such aspyridine, 1-methylpiperidine, 1-ethylpiperidine,N,N′-Dimethylpiperazine, N,N,N′,N′-Tetramethylethylenediamine), anitrile (such as benzonitrile), an alkyl hydrocarbon (such as octane,nonane, dodecane, ethylcyclohexane), an aromatic hydrocarbon (such astoluene, mesitylene), a tertiary aminoether (such asbis(2-dimethylaminoethyl) ether), or mixtures thereof.

In another embodiment, a vessel for depositing a silicon-containing filmcomprising one or more organoaminosilane precursor having Formulae Athrough E is described herein. In one particular embodiment, the vesselcomprises at least one pressurizable vessel (preferably of stainlesssteel) fitted with the proper valves and fittings to allow the deliveryof one or more precursors to the reactor for a CVD or an ALD process. Inthis or other embodiments, the organoaminosilane precursor havingFormulae A through E is provided in a pressurizable vessel comprised ofstainless steel and the purity of the precursor is 98% by weight orgreater or 99.5% or greater which is suitable for the majority ofsemiconductor applications. In certain embodiments, such vessels canalso have means for mixing the precursors with one or more additionalprecursor if desired. In these or other embodiments, the contents of thevessel(s) can be premixed with an additional precursor. Alternatively,the organoaminosilane precursor and/or other precursor can be maintainedin separate vessels or in a single vessel having separation means formaintaining the organoaminosilane precursor and other precursor separateduring storage.

In yet another embodiment, there is provided a method for preparing anorganoaminosilane such as those having Formulae A through E describedherein, wherein the method comprises the steps of:

reacting an amine having a formula which is either R¹R²NH or R¹NH₂wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group and a silicon source which is at least oneselected from compounds having the following structures:

wherein R³ and R⁴ are each independently selected from a linear orbranched C₁ to C₁₀ alkylene group, a linear or branched C₃ to C₆alkenylene group, a linear or branched C₃ to C₆ alkynylene group, a C₃to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylene group,a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group in thepresence of a catalyst under reaction conditions sufficient for thesilicon source and amine to react with or without an organic solvent andprovide an organoaminosilane precursor comprising a compound representedby one of following Formulae A through E below:

wherein n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or3; p and q equal 1 or 2 in Formula E and optionally wherein R³ inFormula D forms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom. Exemplary catalysts include, but not limited to,tris(pentafluorophenyl)borane, BR₃ (wherein R is selected from a linear,branched, or cyclic C₁ to C₁₀ alkyl group, a C₅ to C₁₀ aryl group, or aC₁ to C₁₀ alkoxy group), 1,3-diisopropyl-4,5-dimethylimidazol-2-ylidene,2,2′-bipyridyl, phenanthroline, Mg[N(SiMe₃)₂]₂,[tris(4,4-dimethyl-2-oxazolinyl)phenylborate]MgMe,[tris(4,4-dimethyl-2-oxazolinyl)phenylborate]MgH, trimethylaluminium,triethylaluminum, aluminum chloride, Ca[N(SiMe₃)₂]₂, dibenzylcalcium,{CH—[CMeNC₆H₃-2,6-^(i)Pr₂]₂}CaH, triruthenium dodecacarbonyl,{CH—[CMeNC₆H₃-2,6-^(i)Pr₂]₂}Ca[N(SiMe₃)₂],bis(cyclopentadienyl)dialkylltitanium(IV),bis(cylopentadienyl)titanium(IV)difluoride,bis(cylopentadienyl)titanium(IV)dichloridebis(cylopentadienyl)titanium(IV)dihydride, TiMe₂(dmpe)₂[dmpe=1,2-bis(dimethylphosphino) ethane], (C₅H₅)₂Ti(OAr)₂[Ar=(2,6-(iPr)₂C₆H₃)], (C₅H₅)₂Ti(SiHRR′)PMe₃ [wherein R, R′ are eachindependently selected from a hydrogen atom (H), a methyl group (Me),and a phenyl (Ph) group], bis(benzene)chromium(0), chromiumhexacarbonyl, dimanganese decacarbonyl, [Mn(CO)₄Br]₂, ironpentacarbonyl, (C₅H₅)Fe(CO)₂Me, dicobalt octacarbonyl, nickel(II)acetate, nickel(II) chloride, [(dippe)Ni(μ-H)]₂[dippe=1,2-bis(diisopropylphosphino) ethane], (R-indenyl)Ni(PR′₃)Me[wherein R is selected from 1-i-Pr, 1-SiMe₃, and 1,3-(SiMe₃)₂, whereinR′ is selected from a methyl (Me) group and a phenyl (Ph) group],[{Ni(η-CH₂:CHSiMe₂)₂O}₂{μ-(η-CH₂:CHSiMe₂)₂O}], nickel(II)acetylacetonate, ni(cyclooctadiene)₂, copper(II) fluoride, copper(I)chloride, copper(II) chloride, copper(I) bromide, copper(II) bromide,copper(I) iodide, copper(I) acetate, Cu(PPh₃)₃Cl, zinc chloride,[tris(4,4-dimethyl-2-oxazolinyl)phenylborate]ZnH, Sr[N(SiMe₃)₂]₂,Bis(cyclopentadienyl)dialkyllzirconium(IV),Bis(cylopentadienyl)zirconium(IV)difluoride,Bis(cylopentadienyl)zirconium(IV)dichloride,bis(cylopentadienyl)zirconium(IV)dihydride,[(Et₃P)Ru(2,6-dimesitylthiophenolate)][B[3,5-(CF₃)₂C₆H₃]₄],(C₅Me₅)Ru(R₃P)_(x)(NCMe)_(3-x)]⁺ (wherein R is selected from a linear,branched, or cyclic C₁ to C₁₀ alkyl group and a C₅ to C₁₀ aryl group;x=0, 1, 2, 3), tris(triphenylphosphine) rhodium(I)carbonyl hydride,di-p-chloro-tetracarbonyldirhodium(I), tris(triphenylphosphine)rhodium(I) chloride (Wilkinson's Catalyst), hexarhodiumhexadecacarbonyl, tris(triphenylphosphine)rhodium(I) carbonyl hydride,bis(triphenylphosphine)rhodium(I) carbonyl chloride,[RhCl(cyclooctadiene)]₂, tris(dibenzylideneacetone)dipalladium(0),tetrakis(triphenylphosphine)palladium(0), palladium(II) acetate,palladium(II) chloride, palladium(II) iodide, cesium carbonate,(C₅H₅)₂SmH, (C₅Me₅)₂SmH, (NHC)Yb(N(SiMe₃)₂)₂[NHC=1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)], tungstenhexacarbonyl, dirhenium decacarbonyl, triosmium dodecacarbonyl,tetrairidium dodecacarbonyl, (acetylacetonato) dicarbonyliridium(I),(POCOP)IrHCI [(POCOP)=2,6-(R₂PO)₂CeH₃, (R is selected from isopropyl(Pr), normal butyl (^(n)Bu), and methyl (Me)], Ir(Me)₂(CsMes)L [whereinL is selected from PMe₃ and PPh₃], [Ir(cyclooctadiene)OMe]₂,platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane (Karstedt'sCatalyst), H₂PtCl₆.nH₂O (chloroplatinic acid),bis(tri-tert-butylphosphine)platinum(0), PtO₂, and Pt(cyclooctadiene)₂.

In one embodiment of the method described herein, a cyclic depositionprocess such as CCVD, ALD, or PEALD may be employed, wherein at leastone silicon-containing precursor selected from an organoaminosilaneprecursor having the formula described herein and optionally anitrogen-containing source such as, for example, ammonia, hydrazine,monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen,ammonia plasma, nitrogen plasma, nitrogen/argon plasma, nitrogen/heliumplasma, nitrogen/hydrogen plasma, organic amines (e.g. methylamine,ethylamine, iso-propylamine, tert-butylamine), and/or a plasma derivedfrom an organic amine are employed.

In certain embodiments, the gas lines connecting from the precursorcanisters to the reaction chamber are heated to one or more temperaturesdepending upon the process requirements and the container of theorganoaminosilane precursor having the formulae A through E describedherein is kept at one or more temperatures for bubbling. In otherembodiments, a solution comprising the at least one silicon-containingprecursor having the formula described herein is injected into avaporizer kept at one or more temperatures for direct liquid injection.

A flow of argon and/or other gas may be employed as a carrier gas tohelp deliver the vapor of the at least one organoaminosilane precursorto the reaction chamber during the precursor pulsing. In certainembodiments, the reaction chamber process pressure is about 10 torr orless, preferably about 1 torr.

In a typical ALD or CCVD process, a substrate such as, withoutlimitation, a silicon oxide, carbon doped silicon oxide, flexiblesubstrate, or metal nitride substrate is heated on a heater stage in areaction chamber that is exposed to the silicon-containing precursorinitially to allow the organoaminosilane to chemically adsorb onto thesurface of the substrate. A purge gas such as nitrogen, argon, or otherinert gas purges away unabsorbed excess organoaminosilane from theprocess chamber. After sufficient purging, an oxygen-containing sourcemay be introduced into reaction chamber to react with the absorbedsurface followed by another gas purge to remove reaction by-productsfrom the chamber. The process cycle can be repeated to achieve thedesired film thickness. In other embodiments, pumping under vacuum canbe used to remove unabsorbed excess organoaminosilane from the processchamber, after sufficient evacuation under pumping, an oxygen-containingsource may be introduced into reaction chamber to react with theabsorbed surface followed by another pumping down purge to removereaction by-products from the chamber. In yet another embodiment, theorganoaminosilane and the oxygen-containing source can be co-flowed intoreaction chamber to react on the substrate surface to deposit siliconoxide, carbon doped silicon oxide. In a certain embodiment of cyclicCVD, the purge step is not used.

In this or other embodiments, it is understood that the steps of themethods described herein may be performed in a variety of orders, may beperformed sequentially or concurrently (e.g., during at least a portionof another step), and any combination thereof. The respective step ofsupplying the precursors and the nitrogen-containing source gases may beperformed by varying the duration of the time for supplying them tochange the stoichiometric composition of the resultingsilicon-containing film.

In another embodiment of the method disclosed herein, the filmscontaining both silicon and nitrogen are formed using an ALD, PEALD,CCVD or PECCVD deposition method that comprises the steps of:

a. providing a substrate in an ALD reactor;

b. introducing into the ALD reactor at least one organoaminosilaneprecursor a compound represented by one of following Formulae A throughE below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom;

c. chemisorbing the at least one organoaminosilane precursor onto asubstrate;

d. purging away the unreacted at least one organoaminosilane precursorusing a purge gas;

e. providing a nitrogen-containing source to the organoaminosilaneprecursor onto the heated substrate to react with the sorbed at leastone organoaminosilane precursor; and

f. optionally purging or pumping away any unreacted nitrogen-containingsource.

In another aspect, there is provided a method of forming a film selectedfrom a silicon oxide and a carbon doped silicon oxide film via a PEALDor a PECCVD deposition process, the method comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor oxygen along with at least oneorganoaminosilane precursor a compound represented by one of followingFormulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom;

c. purging the reactor with a purge gas along with oxygen;

d. applying RF plasma;

e. purging the reactor with a purge gas or pumping the reactor to removeunreacted organoaminosilane and any by-products; and wherein steps bthrough e are repeated until a desired thickness of the film isobtained.

In another embodiment of the method disclosed herein, thesilicon-containing films is formed using a ALD deposition method thatcomprises the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one organoaminosilane precursora compound represented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; l and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom;

c. chemisorbing the at least one organoaminosilane precursor onto asubstrate;

d. purging away the unreacted at least one organoaminosilane precursorusing a purge gas;

e. providing an oxygen-containing source to the organoaminosilaneprecursor onto the heated substrate to react with the sorbed at leastone organoaminosilane precursor; and

f. optionally purging or pumping away any unreacted oxygen-containingsource.

In another aspect, there is provided a method of forming a siliconnitride or silicon carbonitride film via PEALD or PECCVD process, themethod comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor a nitrogen-containing source and atleast one organoaminosilane precursor a compound represented by one offollowing Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom;

c. purging the reactor with a purge gas along with thenitrogen-containing source;

d. applying RF plasma; and

e. purging the reactor with a purge gas or pumping the reactor to removeunreacted organoaminosilane and any by-products; and wherein steps bthrough e are repeated until a desired thickness of the film isobtained.

The above steps define one cycle for the method described herein; andthe cycle can be repeated until the desired thickness of asilicon-containing film is obtained. In this or other embodiments, it isunderstood that the steps of the methods described herein may beperformed in a variety of orders, may be performed sequentially orconcurrently (e.g., during at least a portion of another step), and anycombination thereof. The respective step of supplying the precursors andoxygen-containing source may be performed by varying the duration of thetime for supplying them to change the stoichiometric composition of theresulting silicon-containing film, although always using oxygen in lessthan a stoichiometric amount relative to the available silicon.

For multi-component silicon-containing films, other precursors such assilicon-containing precursors, nitrogen-containing precursors, reducingagents, or other reagents can be alternately introduced into the reactorchamber.

In a further embodiment of the method described herein, thesilicon-containing film is deposited using a thermal CVD process. Inthis embodiment, the method comprises:

a. placing one or more substrates into a reactor which is heated to oneor more temperatures ranging from ambient temperature to about 700° C.;

b. introducing at least one organoaminosilane precursor a compoundrepresented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom; and

c. providing an oxygen-containing source into the reactor to at leastpartially react with the at least one organoaminosilane precursor anddeposit a silicon-containing film onto the one or more substrates. Incertain embodiments of the CVD method, the reactor is maintained at apressure ranging from 10 mTorr to 760 Torr during the introducing step.The above steps define one cycle for the method described herein; andthe cycle can be repeated until the desired thickness of asilicon-containing film is obtained. In this or other embodiments, it isunderstood that the steps of the methods described herein may beperformed in a variety of orders, may be performed sequentially orconcurrently (e.g., during at least a portion of another step), and anycombination thereof. The respective step of supplying the precursors andoxygen-containing source may be performed by varying the duration of thetime for supplying them to change the stoichiometric composition of theresulting silicon-containing film, although always using oxygen in lessthan a stoichiometric amount relative to the available silicon.

In a further embodiment of the method described herein, an amorphous orcrystalline silicon film is deposited using the Formulae A through Eprecursor described herein. In this embodiment, the method comprises:

a. placing one or more substrates into a reactor which is heated to aone or more temperatures ranging from ambient temperature to about 700°C.;

b. introducing at least one organoaminosilane precursor a compoundrepresented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom; and

c. providing a reducing agent source into the reactor to at leastpartially react with the at least one organoaminosilane precursor anddeposit a silicon-containing film onto the one or more substrates. Thereducing agent is selected from the group consisting of hydrogen,hydrogen plasma, hydrogen chloride. In certain embodiments of the CVDmethod, the reactor is maintained at a pressure ranging from 10 mTorr to760 Torr during the introducing step. The above steps define one cyclefor the method described herein; and the cycle can be repeated until thedesired thickness of a film is obtained.

For multi-component silicon-containing films, other precursors such assilicon-containing precursors, nitrogen-containing precursors,oxygen-containing sources, reducing agents, and/or other reagents can bealternately introduced into the reactor chamber.

In a further embodiment of the method described herein, thesilicon-containing film is deposited using a thermal CVD process. Inthis embodiment, the method comprises:

a. placing one or more substrates into a reactor which is heated to oneor more temperatures ranging from ambient temperature to about 700° C.;

b. introducing at least one organoaminosilane precursor a compoundrepresented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom; and

c. providing a nitrogen-containing source into the reactor to at leastpartially react with the at least one organoaminosilane precursor anddeposit a silicon-containing film onto the one or more substrates. Incertain embodiments of the CVD method, the reactor is maintained at apressure ranging from 10 mTorr to 760 Torr during the introducing step.

In a further embodiment of the method described herein, theorganoaminosilane precursors are used for depositing a siliconcontaining film which is an amorphous film, a crystalline silicon film,or a mixture thereof. In these embodiments, the silicon containing filmsis formed using a deposition method selected from ALD or cyclic CVD thatcomprises the steps of:

placing a substrates into a reactor which is heated to a temperatureranging from ambient temperature to about 700° C. and maintained at apressure of 1 Torr or less;

introducing at least one organoaminosilane precursor a compoundrepresented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom;

providing a reducing agent into the reactor to at least partially reactwith the at least one organoaminosilane precursor and deposit a siliconcontaining film onto the one or more substrates wherein the reducingagent is at least one selected from the group consisting of hydrogen,hydrogen plasma, or hydrogen chloride. The above steps define one cyclefor the method described herein; and the cycle can be repeated until thedesired thickness of a silicon containing film is obtained. The desiredthickness of the film can range from 1 Å to 10,000 Å.

In another aspect, there is provided a method of forming asilicon-containing film onto at least a surface of a substrate using adeposition process selected from a plasma enhanced atomic layer (PEALD)process and a plasma enhanced cyclic chemical vapor deposition (PECCVD)process, the method comprising:

a. providing a substrate in an ALD reactor;

b. providing in the ALD reactor at least one organoaminosilane precursorcomprising a compound represented by one of following Formulae A throughE below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom;

c. purging the ALD reactor with an inert gas;

d. providing a plasma source in the ALD reactor;

e. purging the ALD reactor with an inert gas; and wherein the steps bthrough e are repeated until a desired thickness of thesilicon-containing film is obtained. The plasma source is selected fromthe group consisting of hydrogen plasma, argon plasma, helium plasma,neon plasma, xenon plasma, and mixtures thereof. The silicon-containingfilm is selected from the group consisting of silicon carbonitride,silicon carbide, silicon nitride, silicon carbonitride, and siliconcarboxynitride.

In yet another aspect, there is provided a method of depositingamorphous or crystalline silicon film via an atomic layer deposition orcyclic chemical vapor deposition process or chemical vapor deposition attemperature lower than conventional silicon precursors, the methodcomprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one organoaminosilane precursora compound represented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom;

c. purging the reactor with a purge gas wherein steps b through c arerepeated until a desired thickness of the silicon film is obtained.

It is believed that Formulae A through E precursors can generate H₂Si:di-radicals or H₃Si. radical upon heating which can promote formationoligomers containing Si—Si bonds or anchor on the surface of asubstrate. Those oligomers or anchored SiH₂ or SiH₃ can further formamorphous silicon films. In this or other embodiments, those oligomersfunction as a seed layer for subsequent deposition of silicon or siliconoxide films.

In certain embodiments, the organoaminosilane precursors having FormulaeA through E described herein can also be used as a dopant for metalcontaining films, such as but not limited to, metal oxide films or metalnitride films. In these embodiments, the metal containing film isdeposited using an ALD or CVD process such as those processes describedherein using metal alkoxide, metal amide, or volatile organometallicprecursors. Examples of suitable metal alkoxide precursors that may beused with the method disclosed herein include, but are not limited to,group 3 to 6 metal alkoxide, group 3 to 6 metal complexes having bothalkoxy and alkyl substituted cyclopentadienyl ligands, group 3 to 6metal complexes having both alkoxy and alkyl substituted pyrrolylligands, group 3 to 6 metal complexes having both alkoxy and diketonateligands; group 3 to 6 metal complexes having both alkoxy and ketoesterligands; Examples of suitable metal amide precursors that may be usedwith the method disclosed herein include, but are not limited to,tetrakis(dimethylamino)zirconium (TDMAZ),tetrakis(diethylamino)zirconium (TDEAZ),tetrakis(ethylmethylamino)zirconium (TEMAZ),tetrakis(dimethylamino)hafnium (TDMAH), tetrakis(diethylamino)hafnium(TDEAH), and tetrakis(ethylmethylamino)hafnium (TEMAH),tetrakis(dimethylamino)titanium (TDMAT), tetrakis(diethylamino)titanium(TDEAT), tetrakis(ethylmethylamino)titanium (TEMAT), tert-butyliminotri(diethylamino)tantalum (TBTDET), tert-butyliminotri(dimethylamino)tantalum (TBTDMT), tert-butyliminotri(ethylmethylamino)tantalum (TBTEMT), ethyliminotri(diethylamino)tantalum (EITDET), ethyliminotri(dimethylamino)tantalum (EITDMT), ethyliminotri(ethylmethylamino)tantalum (EITEMT), tert-amyliminotri(dimethylamino)tantalum (TAIMAT), tert-amyliminotri(diethylamino)tantalum, pentakis(dimethylamino)tantalum,tert-amylimino tri(ethylmethylamino)tantalum,bis(tert-butylimino)bis(dimethylamino)tungsten (BTBMW),bis(tert-butylimino)bis(diethylamino)tungsten,bis(tert-butylimino)bis(ethylmethylamino)tungsten, and combinationsthereof. Examples of suitable organometallic precursors that may be usedwith the method disclosed herein include, but are not limited to, group3 metal cyclopentadienyls or alkyl cyclopentadienyls. Exemplary Group 3to 6 metal herein include, but not limited to, Y, La, Ce, Pr, Nd, Sm,Eu, Gd, Tb, Dy, Er, Yb, Lu, Ti, Hf, Zr, V, Nb, Ta, Cr, Mo, and W.

In certain embodiments, the resultant silicon-containing films orcoatings can be exposed to a post-deposition treatment such as, but notlimited to, a plasma treatment, chemical treatment, ultraviolet lightexposure, electron beam exposure, and/or other treatments to affect oneor more properties of the film.

In certain embodiments, the silicon-containing films described hereinhave a dielectric constant of 6 or less. In these or other embodiments,the films can have a dielectric constant of about 5 or below, or about 4or below, or about 3.5 or below. However, it is envisioned that filmshaving other dielectric constants (e.g., higher or lower) can be formeddepending upon the desired end-use of the film. An example of thesilicon containing or silicon-containing film that is formed using theorganoaminosilane precursors and processes described herein has theformulation SixOyCzNHe wherein Si ranges from about 10% to about 40%; Oranges from about 0% to about 65%; C ranges from about 0% to about 75%or from about 0% to about 50%; N ranges from about 0% to about 75% orfrom about 0% to 50%; and H ranges from about 0% to about 50% atomicpercent weight % wherein x+y+z+v+w=100 atomic weight percent, asdetermined for example, by XPS or other means.

As mentioned previously, the method described herein may be used todeposit a silicon-containing film on at least a portion of a substrate.Examples of suitable substrates include but are not limited to, silicon,SiO₂, Si₃N₄, OSG, FSG, silicon carbide, hydrogenated silicon carbide,silicon nitride, hydrogenated silicon nitride, silicon carbonitride,hydrogenated silicon carbonitride, boronitride, antireflective coatings,photoresists, a flexible substrate, organic polymers, porous organic andinorganic materials, metals such as copper and aluminum, and diffusionbarrier layers such as but not limited to TiN, Ti(C)N, TaN, Ta(C)N, Ta,W, or WN. The films are compatible with a variety of subsequentprocessing steps such as, for example, chemical mechanical planarization(CMP) and anisotropic etching processes.

The deposited films have applications, which include, but are notlimited to, computer chips, optical devices, magnetic informationstorages, coatings on a supporting material or substrate,microelectromechanical systems (MEMS), nanoelectromechanical systems,thin film transistor (TFT), light emitting diodes (LED), organic lightemitting diodes (OLED), IGZO, and liquid crystal displays (LCD).

The following examples illustrate the method for preparingorganoaminosilane precursors as well as depositing silicon-containingfilms described herein and are not intended to limit it in any way.

EXAMPLES

In the following examples, unless stated otherwise, properties wereobtained from sample films that were deposited onto medium resistivity(8-12 Ωcm) single crystal silicon wafer substrates.

Example 1: Synthesis of 1-di-iso-propylamino-1,4-disilabutane

In a 3-necked round bottom flask equipped with a mechanic stirrer, acondenser, and an addition funnel, a solution of 1 equivalent1,4-disilabutane in hexane was cooled to −20° C. with a cold bath. Withstirring, a solution of 0.5 equivalent of lithium diisopropylamide intetrahydrofuran (THF) was added dropwise through the addition funnel.After the addition was completed, the reaction mixture was allowed towarm up to room temperature. The reaction mixture was stirred at roomtemperature overnight, followed by filtration. A white precipitate,lithium hydride, formed from the reaction as a byproduct was filteredout. The solvent in the filtrate and excess 1,4-disilabutane was removedby distillation. The product, 1-di-iso-propylamino-1,4-disilabutane, wasobtained by vacuum distillation. Gas chromatography (GC) showed that itwas >98% pure 1-di-iso-propylamino-1,4-disilabutane. GC-MS showed thefollowing peaks: 189 (M+), 188 (M−1), 174 (M−15), 159, 144, 130, 102.

Example 2: Synthesis of 1-t-butyl-1-aza-2-5-disilacyclopentane

In a 3-necked round bottom flask equipped with a mechanic stirrer, acondenser, and an addition funnel, a solution of 1 equivalent of1,4-disilabutane in hexane was cooled to −20° C. with a cold bath. Withstirring, a solution of 0.5 equivalent of lithium t-butylamide in THFwas added dropwise through the addition funnel. After the addition wascompleted, the reaction mixture was allowed to warm up to roomtemperature. The reaction mixture was stirred at room temperatureovernight, followed by filtration. A white precipitate, lithium hydride,formed from the reaction as a byproduct was filtered out. The solvent inthe filtrate and the excess 1,4-disilabutane were removed bydistillation. The product, 1-t-butyl-1-aza-2-5-disilacyclopentane, wasobtained by vacuum distillation. Gas chromatography (GC) showed that itwas >98% pure. GC-MS showed the following peaks: 159 (M+), 158 (M−1),144 (M−15), 128, 114, 100.

Example 3: Synthesis of 1,4-bis(di-iso-propylamino)-1,4-disilabutane

In a 3-necked round bottom flask equipped with a mechanic stirrer, acondenser, and an addition funnel, a solution of 0.5 equivalent1,4-disilabutane in hexane was cooled to −20° C. with a cold bath. Withstirring, a solution of 1 equivalent of lithium di-iso-propylamide inTHF was added dropwise through the addition funnel. After the additionwas completed, the reaction mixture was allowed to warm up to roomtemperature. The reaction mixture was stirred at room temperatureovernight, followed by filtration. A white precipitate, lithium hydride,formed from the reaction as a byproduct was filtered out. The solvent inthe filtrate was removed by distillation. The product,1,4-bis(di-iso-propylamino)-1,4-disilabutane, was obtained by vacuumdistillation. B.P. 124° C./1 torr. GC-MS showed the following peaks: 288(M+), 287 (M−1), 243, 229, 207, 188, 144, 130. ¹H NMR: 4.59 (s, 4H),3.03 (m, 4H), 1.08 (d, 24H), 0.73 (t, 4H). ¹³C NMR: 47.76, 24.42, 7.76.

Example 4: Synthesis of 1-diethylamino-1,4-disilabutane and1,4-bis(diethylamino)-1,4-disilabutane

In a scintillation vial, 2 equivalents 1,4-disilabutane and 1 equivalentdiethylamine were combined. To this, 1 mol % of trirutheniumdodecacarbonyl catalyst was added as a solution in THF, and the mixturewas stirred overnight. The two major products observed in solution were1-diethylamino-1,4-disilabutane and1,4-bis(diethylamino)-1M4-disilabutane. GO-MS showed the followingpeaks: (a) 1-diethylamino-1,4-disilabutane: 161 (M+), 146 (M−15), 130,116, 102, 89, 72; (b) 1,4-bis(diethylamino)-1,4-disilabutane: 232 (M+),217 (M−15), 203, 187, 173, 160, 146, 130, 116.

Additional organoaminosilane precursors of Formula A to E were made viasimilar fashion as Examples 1 to 4 and were characterized by massspectroscopy (MS). The molecular weight (MMV, the structure, andcorresponding major MS fragmentation peaks of each organoaminosilaneprecursor are provided in Table 1 to confirm their identification.

TABLE 1 Organoaminosilanes Having Formula A, B, C, D, and E. No.Precursor Name MW Structure MS Peaks 1 1-dimethylamino-1,4- disilabutane133.34

133, 116, 105, 86, 74, 58, 44 2 1,4-bis(dimethylamino)- 1,4-disilabutane176.41

176, 161, 145, 132, 116, 100, 89, 74 3 1-diethylamino-1,4- disilabutane161.41

161, 146, 130, 116, 102, 89, 72 4 1,4-bis(diethylamino)-1,4-disilabutane 232.52

232, 217, 203, 187, 173, 160, 146, 130, 116 5 1-dipropylamino-1,4-disilabutane 189.45

189, 174, 161, 144, 131, 116, 100, 89 6 1,4-bis(dipropylamino)-1,4-disilabutane 288.63

288, 273, 260, 230, 189, 174 161, 145, 128 7 1-di-iso-propylamino-1,4-disilabutane 189.45

189, 188, 174, 159, 144, 130, 102 8 1,4-bis(di-iso- propylamino)-1,4-disilabutane 288.63

288, 287, 243, 229, 207, 188, 144, 130 9 1-(propyl-iso-propylamino)-1,4- disilabutane 189.45

189, 174, 160, 144, 130, 116, 102, 86 10 1,4-bis(propyl-iso-propylamino)-1,4- disilabutane 288.63

288, 274, 260, 244, 230, 216, 201, 188, 173, 160, 144, 128 111-dibutylamino-1,4- disilabutane 217.50

217, 202, 189, 175, 159, 145, 132, 116, 102, 89 121,4-bis(dibutylamino)-1,4- disilabutane 344.73

345, 330, 314, 302, 286, 217, 202, 175, 159, 116, 102 131-di-iso-butylamino-1,4- disilabutane 217.50

217, 202, 175, 159, 143, 116 14 1,4-bis(di-iso-butylamino)-1,4-disilabutane 344.73

344, 329, 302, 286, 217, 202, 187, 175 15 1-di-sec-butylamino-1,4-disilabutane 217.50

217, 202, 189, 172, 158, 144, 132, 114, 102 16 1-(sec-butyl-iso-propylamino)-1,4- disilabutane 203.48

203, 188, 174, 158, 144, 130, 119, 102 17 1,4-bis(sec-butyl-iso-propylamino)-1,4- disilabutane 316.68

316, 301, 281, 257, 243, 229, 215, 202, 186, 172, 158 181-(dicyclohexylamino)-1,4- disilabutane 269.58

269, 254, 239, 227, 211, 199, 187, 129, 116 19 1-(cyclohexyl-iso-propylamino)-1,4- disilabutane 229.51

229, 214, 199, 187, 171, 159, 145, 131, 116, 102 201,4-bis(cyclohexyl-iso- propylamino)-1,4- disilabutane 368.76

368, 353, 340, 327, 229, 185, 171, 159, 145, 130, 116 211-(2-pyridyl-methylamino)- 1,4-disilabutane 196.40

196, 181, 165, 151, 137, 121, 108 22 1,4-bis(2-pyridyl-methylamino)-1,4- disilabutane 302.53

302, 287, 274, 258, 244, 223, 210, 196, 180, 166 231-pyrrolyl-1,4-disilabutane 155.35

155, 140, 124, 112, 96, 86 24 1-(2,5-dimethylpyrrolyl)- 1,4-disilabutane183.40

183, 168, 154, 136, 124, 110 25 1-(phenylmethylamino)- 1,4-disilabutane195.41

195, 180, 165, 149, 137, 119, 107, 193 26 1,4- bis(phenylmethylamino)-1,4-disilabutane 300.55

300, 285, 271, 255, 242, 226, 208, 193, 180, 165 271-(2-methylpiperidino)- 1,4-disilabutane 187.43

187, 172, 156, 141, 128, 113, 100, 84 28 1,4-bis(2-methylpiperidino)-1,4- disilabutane 284.59

284, 269, 254, 240, 226, 208, 185, 173, 157, 143 291-(2,6-dimethylpiperidino)- 1,4-disilabutane 201.46

201, 186, 171, 155, 143, 130, 116, 102 30 1,4-dimethyl-1,4-diaza-5,8-disilacyclooctane 174.39

174, 160, 143, 130, 115, 100, 86, 72 31 1-(2,6- dimethylmorpholino)-1,4-disilabutane 203.43

203, 188, 173, 161, 145, 130, 116, 102 32 1,4-bis(2,6-dimethylmorpholino)-1,4- disilabutane 316.59

316, 301, 286, 274, 258, 244, 232, 216, 203, 188 331-(2-methylindolino)-1,4- disilabutane 221.45

221, 206, 191, 176, 161, 146, 132, 117, 105 341,4-bis(2-methylindolino)- 1,4-disilabutane 352.63

352, 337, 324, 308, 394, 280, 264, 250, 235, 221, 207, 191 351-iso-propylamino-1,4- disilabutane 147.37

147, 132, 116, 100, 88, 72 36 1,4-bis(iso-propylamino)- 1,4-disilabutane204.46

204, 189, 172, 160, 144, 130, 117, 102 37 1-iso-propyl-1-aza-2,5-disilacyclopentane 145.35

145, 130, 114, 100, 86 38 5-iso-propyl-5-aza- 1,4,6,9-tetrasilanonane235.62

235, 220, 205, 191, 177, 159, 147, 130, 116, 102 391,6-di-iso-propyl-1,6- diaza-2,5,7,10- tetrasilacyclodecane 290.70

290, 275, 260, 246, 232, 218, 202, 190, 174, 159 401-tert-butyl-1-aza-2,5- disilacyclopentane 159.38

159, 158, 144, 128, 114, 100 41 5-tert-butyl-5-aza-1,4,6,9-tetrasilanonane 249.65

249, 234, 228, 215, 192, 176, 158, 144, 132, 117 421,6-di-tert-butyl-1,6-diaza- 2,5,7,10- tetrasilacyclodecane 318.76

318, 303, 287, 271, 261, 247, 229, 213, 203, 187

Example 5: Atomic Layer Deposition of Silicon-Containing Film Using1-di-iso-propylamino-1-4-disilabutane and ozone

The following depositions were performed on a laboratory scale ALDprocessing tool at two temperature conditions: 55° C. and 100° C. Thesilicon precursor was delivered to the chamber by vapor draw. All gases(e.g., purge and reactant gas or precursor and oxygen source) werepreheated accordingly prior to entering the deposition zone. Gases andprecursor flow rates were controlled with ALD diaphragm valves with highspeed actuation. The substrates used in the deposition were 12-inch longsilicon strips. A thermocouple attached on the sample holder to confirmsubstrate temperature during deposition. Depositions were performedusing ozone (6-19% wt) as oxygen source gas.

A typical ALD cycle comprises the following steps:

-   -   a. providing a substrate in an ALD reactor;    -   b. providing in the ALD reactor at least one organoaminosilane        precursor for 6 seconds    -   c. purging the ALD reactor with an inert gas for 6 seconds;    -   d. providing ozone in the ALD reactor for 4 seconds;    -   e. purging the ALD reactor with an inert gas for 6 seconds;        Steps b through e are repeated until a desired thickness of the        film is obtained. Thickness and refractive indices of the films        were measured using a FilmTek 2000SE ellipsometer by fitting the        reflection data from the film to a pre-set physical model (e.g.,        the Lorentz Oscillator model). Wet etch rate was performed using        1% solution of 49% hydrofluoric (HF) acid in deionized water.        Thermal oxide wafers were used as reference for each batch to        confirm solution concentration. Typical thermal oxide wafer wet        etch rate for 1% HF in H₂O solution is 0.5 Å/s. Film thickness        before and after etch was used to calculate wet etch rate. The        thickness non-uniformity was calculated from 6-point        measurements using the following equation: %        non-uniformity=((max−min)/(2*mean)). Film elemental composition        and density are characterized by X-Ray Photoelectron        Spectroscopy (XPS). The growth rate (GPC) is determined by the        thickness of the resultant film divided by total number of        cycles.

TABLE 2 Process parameters, growth per cycle (GPC) and refractive indexfor silicon-containing film using 1-di-iso-propylamino-1-4-disilabutaneand ozone Deposition Ozone Growth Per Temperature concentration CycleRefractive Sample ID (° C.) (% wt) (Å/cycle) Index Ex. Film 1 100 14 2.71.480 Ex. Film 2 100 6 2.4 1.467 Ex. Film 3 100 19 2.8 1.466 Ex. Film 455 14 2.6 1.486 Ex. Film 5^(a) 100 14 2.7 1.465 ^(a)Ex. Film 5 used a 60second (s) evacuation time after the organoaminosilane precursor dose.

TABLE 3 Film composition measured by XPS for silicon-containing filmusing 1-di-iso- propylamino-1-4-disilabutane and ozone dHF WER Sample ID% O % C % Si (Å/s) Ex. Film 1 67.6 0.8 32.1 3.3 Ex. Film 2 62.2 5.0 32.71.9 Ex. Film 3 66.8 1.0 32.2 4.1 Ex. Film 4 55.0 9.6 33.3 1.6 Ex. Film 566.5 0.9 32.6 N/A

FIG. 1 provides growth rate per cycle vs. temperature for the1-di-isopropylamino-1,4,-disilabutane films (average value from Ex. Film1, 3, 5 at 100° C.) and Ex. Film 4 as well as films deposited via athermal ALD process using the following organoaminosilanes:bis(diethylamino)silane (BDEAS: I. Suzuki, K. Yanagita, and C.Dussarrat, ECS Trans. 3 (15), 119 (2007) and M. W. O'Neill, H. R. Bowen,A. Derecskei-Kovacs, K. S. Cuthill, B. Han and M. Xiao, ElectrochemistrySociety Interface Winter 2011, 33 (2011)), bis(tert-butylamino)silane(BTBAS: M. W. O'Neill, H. R. Bowen, A. Derecskei-Kovacs, K. S. Cuthill,B. Han and M. Xiao, Electrochemistry Society Interface Winter 2011, 33(2011)), bis(ethylmethylamino)silane (BEMAS: S. J. Won, H-S. Jung, S.Suh, Y. J. Choi, N.-I. Lee, C. S. Hwang, H. J. Kim, J. Vac. Sci.Technol. A 30(1), 01A126 (2012)), tris(dimethylamino)silane(TRDMAS: L.Han, and Z. Chen, Z. ECS Journal of Solid State Science and Technology2(11): N228-N236 (2013)), di-sec-butylaminosilane (DSBAS: A.Mallikarjunan, A. Derecskei-kovacs, H. Chandra, B. Han, M. Xiao, X. Lei,M. L. O. Neill, H. Liang, H. Bo, Z. Qingfan, H. Cheng, 13thInternational Conference on Atomic Layer Deposition (2013)). As shown inFIG. 1, the silicon-containing films deposited using theorganoaminosilanes described herein exhibited higher growth ratesrelative to the other, referenced organoaminosilane precursors. Further,the deposition temperature can be extended to one or more temperaturesbelow 100° C., such as Ex. Film 4 which was deposited at a temperatureof 55° C. Carbon concentration in the film range from 0.3 wt % to 9.6 wt% depending on the ozone concentration, suggesting it is possible toadjust the physical properties of the resultant silicon-containingfilms.

Example 6: Plasma Enhanced Atomic Layer Deposition of Silicon-ContainingFilm Using 1-Di-iso-propylamino-1-4-disilabutane and nitrogen/argonplasma

A deposition of silicon containing film was performed using1-di-iso-propylamino-1,4-disilabutane and a nitrogen/argon plasma. Thesilicon wafer was heated to 100° C. or 300° C., respectively. Depositionprocess was performed using 300 mm production tool, ASM Stellar 3000,repeated 1000 times, using the following process conditions:

-   -   a. providing a substrate in an ALD reactor    -   b. introducing organoaminosilane precursor:        1-di-iso-propylamino-1,4-disilabutane        -   delivery conditions: Ar carrier gas 200 sccm, precursor            container was kept at room temperature        -   chamber pressure: 2 Torr        -   precursor pulse: 1 second    -   c. inert gas purge        -   argon flow: 300 sccm        -   chamber pressure: 2 Torr        -   purge time: 5 seconds    -   d. nitrogen/argon plasma        -   argon flow: 500 sccm        -   nitrogen flow: 200 sccm        -   chamber pressure: 2 Torr        -   plasma power: 500 W        -   plasma time: 5 seconds    -   e. purge plasma        -   argon flow: 300 sccm        -   chamber pressure: 2 Torr        -   purge time: 0.5 seconds

Deposition rate, refractive index, density as well as wet etch rate indilute HF of the resultant films are listed below in Table 4. Referringto the data in Table 4, the oxygen is believed to come frompost-deposition air exposure when samples were sending for XPS analysis.

TABLE 4 Deposition rate, refractive index of deposited films and filmproperties using 1-di-iso-propylamino- 1-4-disilabutane andnitrogen/argon plasma Wafer Deposition O WER temp Rate Refractive Ccontent Density in dHF (° C.) (Å/cycle) index (%) (%) (g/cc) (Å/s) 1000.41 1.73 9.6 16.3 2.0 >33 300 0.15 2.02 4.9 2.4 2.9 0.8

Example 7: Plasma Enhanced Atomic Layer Deposition of Silicon-ContainingFilm Using 1-Di-iso-propylamino-1-4-disilabutane and argon plasma

A deposition of silicon containing film was performed using1-di-iso-propylamino-1,4-disilabutane and argon plasma. The siliconwafer was heated to 100° C. or 300° C., respectively. Deposition processwas performed using 300 mm production tool, ASM Stellar 3000, repeated1000 times, using the following process conditions:

-   -   a. providing a substrate in an ALD reactor    -   b. introducing organoaminosilane precursor:        1-di-iso-propylamino-1,4-disilabutane        -   delivery conditions: Ar carrier gas 200 sccm, precursor            container was kept at room temperature        -   chamber pressure: 2 Torr        -   precursor pulse: 1 second    -   c. inert gas purge        -   argon flow: 300 sccm        -   chamber pressure: 2 Torr        -   purge time: 2 seconds    -   d. argon plasma        -   argon flow: 500 sccm        -   chamber pressure: 2 Torr        -   plasma power: 500 W        -   plasma time: 5 seconds    -   e. purge plasma        -   argon flow: 300 sccm        -   chamber pressure: 2 Torr        -   purge time: 2 seconds

Deposition rate, refractive index, film composition, density as well aswet etch rate of the resultant films in dilute HF are listed below inTable 5. Referring to the data in Table 5, the oxygen is believed tocome from post-deposition air exposure when samples were sending for XPSanalysis.

TABLE 5 Deposition rate, refractive index of deposited films and filmproperties 1-di-iso-propylamino- 1-4-disilabutane and argon plasma WaferDeposition WER temp Rate Refractive C O N Si Density in dHF (° C.)(Å/cycle) index (%) (%) (%) (%) (g/cc) (Å/s) 100 0.18 1.96 50.4 9.4 19.820.5 1.88 <0.05 300 0.21 2.01 61.9 8.0 12.7 17.4 1.92 <0.05

The wet etch rate in dilute HF of less than 0.05 Å/s, which is muchlower than that of typical thermal oxide film (0.5 Å/s) under the sameconditions, demonstrating the organoaminosilanes described herein affectthe resultant properties of the silicon-containing films depositedtherefrom.

1. A method for forming a silicon oxide or a carbon doped silicon oxidefilm on a substrate comprising: reacting an oxygen-containing sourcewith a precursor comprising at least one organoaminosilane precursorcomprising a compound represented by one of following Formulae A throughE below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom in a vapor deposition to form the film on the substrate.
 2. Themethod of claim 1 wherein the vapor deposition is at least one selectedfrom the group consisting of at least one selected from chemical vapordeposition, low pressure vapor deposition, plasma enhanced chemicalvapor deposition, cyclic chemical vapor deposition, plasma enhancedcyclic chemical vapor deposition, atomic layer deposition, and plasmaenhanced atomic layer deposition.
 3. The method of claim 1 wherein theat least one organoaminosilane precursor is selected from the groupconsisting of 1-dimethylamino-1,4-disilabutane,1-diethylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane,1-di-isopropylamino-1,4-disilabutane,1-di-sec-butylamino-1,4-disilabutane,1-phenylmethylamino-1,4-disilabutane,2,6-dimethylpiperidino-1,4-disilabutane,phenylethylamino-1,4-disilabutane, 1-dimethylamino-1,3-disilapropane,1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane,di-iso-propylamino-1,3-disilapropane,1-di-sec-butylamino-1,3-disilapropane,1-phenylmethylamino-1,3-disilapropane,2,6-dimethylpiperidino-1,3-disilapropane, andphenylethylamino-1,3-disilapropane.
 4. The method of claim 1 wherein thereacting step is conducted at a temperature of 200° C. or less.
 5. Themethod of claim 1 wherein the reacting step is conducted at atemperature of 100° C. or less.
 6. The method of claim 1 wherein thereacting step is conducted at 50° C. or less.
 7. A method for forming asilicon oxide or carbon doped silicon oxide film on a substratecomprising: forming via vapor deposition the film on the substrate froma composition comprising at least one organoaminosilane precursorcomprising a compound represented by one of following Formulae A throughE below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom, and at least one oxygen-containing source, wherein the vapordeposition is at least one selected from chemical vapor deposition, lowpressure vapor deposition, plasma enhanced chemical vapor deposition,cyclic chemical vapor deposition, plasma enhanced cyclic chemical vapordeposition, atomic layer deposition, and plasma enhanced atomic layerdeposition.
 8. The method of claim 7 wherein the at least oneorganoaminosilane precursor is selected from the group consisting of1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane,1-ethylmethylamino-1,4-disilabutane,1-di-isopropylamino-1,4-disilabutane,1-di-sec-butylamino-1,4-disilabutane,1-phenylmethylamino-1,4-disilabutane,2,6-dimethylpiperidino-1,4-disilabutane,phenylethylamino-1,4-disilabutane, 1-dimethylamino-1,3-disilapropane,1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane,di-iso-propylamino-1,3-disilapropane,1-di-sec-butylamino-1,3-disilapropane,1-phenylmethylamino-1,3-disilapropane,2,6-dimethylpiperidino-1,3-disilapropane, andphenylethylamino-1,3-disilapropane.
 9. The method of claim 7 wherein theforming step is conducted at a temperature of 200° C. or less.
 10. Themethod of claim 7 wherein the forming step is conducted at a temperatureof 100° C. or less.
 11. The method of claim 7 wherein the forming stepis conducted at 50° C. or less.
 12. A method for forming a silicon oxideor carbon doped silicon oxide film on a substrate comprising:introducing at least one organoaminosilane precursor comprising acompound represented by one of following Formulae A through E below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom, into a reactor; introducing at least one oxygen-containing sourceinto the reactor wherein the at least one oxygen-containing sourcereacts with the organoaminosilane to provide the film on the substrate.13. A method for forming a silicon oxide or carbon doped silicon oxidefilm on a substrate wherein the film comprises a thickness, the methodcomprising: a. introducing at least one organoaminosilane precursorcomprising a compound represented by one of following Formulae A throughE below:

wherein R¹ is selected from a linear or branched C₁ to C₁₀ alkyl group,a linear or branched C₃ to C₁₀ alkenyl group, a linear or branched C₃ toC₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, and a C₅ to C₁₀ arylgroup; wherein R² is selected from hydrogen, a linear or branched C₁ toC₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linearor branched C₃ to C₁₀ alkynyl group, a C₃ to C₁₀ cyclic alkyl group, anda C₅ to C₁₀ aryl group, R³ and R⁴ are each independently selected from alinear or branched C₁ to C₁₀ alkylene group, a linear or branched C₃ toC₆ alkenylene group, a linear or branched C₃ to C₆ alkynylene group, aC₃ to C₁₀ cyclic alkylene group, a C₃ to C₁₀ hetero-cyclic alkylenegroup, a C₅ to C₁₀ arylene group, and a C₅ to C₁₀ hetero-arylene group;n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p andq in Formula E equal 1 or 2; and optionally wherein R³ in Formula Dforms a ring selected from a four-membered, five-membered orsix-membered ring with the two silicon atoms and at least one nitrogenatom; b. chemisorbing the at least one organoaminosilane precursor ontothe substrate; c. purging away the unreacted at least oneorganoaminosilane precursor using a purge gas; d. providing anoxygen-containing source to the organoaminosilane precursor onto theheated substrate to react with the sorbed at least one organoaminosilaneprecursor; and e. optionally purging away any unreactedoxygen-containing source.
 14. The method of claim 13 wherein steps a.through d. and optional step e. are repeated until the thickness of filmis established.
 15. The method of claim 13 wherein the at least oneorganoaminosilane precursor is selected from the group consisting of1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane,1-ethylmethylamino-1,4-disilabutane,1-di-isopropylamino-1,4-disilabutane,1-di-sec-butylamino-1,4-disilabutane,1-phenylmethylamino-1,4-disilabutane,2,6-dimethylpiperidino-1,4-disilabutane,phenylethylamino-1,4-disilabutane, 1-dimethylamino-1,3-disilapropane,1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane,di-iso-propylamino-1,3-disilapropane,1-di-sec-butylamino-1,3-disilapropane,1-phenylmethylamino-1,3-disilapropane,2,6-dimethylpiperidino-1,3-disilapropane, andphenylethylamino-1,3-disilapropane.
 16. The method of claim 13 whereinthe chemisorbing step is conducted at a temperature of 200° C. or less.17. The method of claim 13 wherein the chemisorbing step is conducted ata temperature of 100° C. or less.
 18. The method of claim 13 wherein thechemisorbing step is conducted at 50° C. or less.
 19. The method ofclaim 13 is an atomic layer deposition process.
 20. The method of claim13 is a plasma enhanced cyclic chemical vapor deposition process.